Optical Aharonov-Bohm effect in twisted bilayer MoS2

Evidence of optical Aharonov-Bohm interference in spin-polarized moiré excitonic complexes

Researchers from Universidade Federal de São Carlos, Universidade Federal do Ceará, and collaborators have reported evidence of the long-sought optical Aharonov-Bohm effect in a two-dimensional semiconductor material known as twisted bilayer MoS₂.

The findings, published in Nature Communications, highlight the potential of moiré materials as a platform for future quantum photonic and quantum information technologies.

To investigate these quantum effects, the researchers performed low-temperature magneto-photoluminescence measurements using the 532 nm Cobolt 08 Series laser as the excitation source. The laser enabled the excitation of excitonic states and the collection of high-resolution optical spectra, allowing the team to detect the subtle interference signatures associated with the optical Aharonov-Bohm effect.