Controlling Single-Photon Emitters with Strain

Researchers from Boston University and the Center for Nanophase Materials Science at the Oak Ridge Nationla Laboratory have made a significant advancement in the field of quantum photonics by using strain to control single-photon emitters (SPEs) in multilayer gallium selenide (GaSe). In the experiment the group used the 532 nm Cobolt laser as excitation source.

The study, conducted at very low temperatures (3.5 K), explored the use of nanopillar arrays to induce strain in multilayer GaSe, creating well-isolated single-photon emitters.
The researchers successfully localized strain-induced SPEs, demonstrating clear photon-antibunching behavior. They found a strong correlation between the strain-dependent confinement potential and the brightness of the SPEs.

The results of this study, which were published in the scientific journal ASC Photonics, offers a promising method for tuning and controlling these emitters, potentially leading to more efficient and stable quantum devices. Understanding and controlling single-photon emitters is crucial for the future of quantum photonics.